HGTG5N120BND
Manufacturer:
On Semiconductor
Mfr.Part #:
HGTG5N120BND
Datasheet:
Description:
IGBTs TO-247-3 Through Hole Single 1.2 kV 167 W 21 A
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 1.2 kV |
| Length | 15.87 mm |
| Width | 4.82 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Height | 20.82 mm |
| Packaging | Tube |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Current Rating | 21 A |
| Lifecycle Status | NRND (Last Updated: 2 months ago) |
| Max Power Dissipation | 167 W |
| Power Dissipation | 167 W |
| Max Collector Current | 21 A |
| Collector Emitter Breakdown Voltage | 1.2 kV |
| Reverse Recovery Time | 65 ns |
| Continuous Collector Current | 21 A |
| Element Configuration | Single |
| Collector Emitter Voltage (VCEO) | 1.2 kV |
| Max Breakdown Voltage | 600 V |
| Collector Emitter Saturation Voltage | 2.45 V |
| Schedule B | 8541290080 |
| Manufacturer Lifecycle Status | ACTIVE, NOT REC (Last Updated: 2 months ago) |
| Maximum Gate Emitter Voltage | 20 V |
Out of Stock
Distributors
--
--Unit Price$--
Ext.Price$--
| Qty | Unit Price | Ext.Price |
|---|---|---|
No data | ||